Simulation et optimisation de diodes électroluminescentes bleues à simple puits quantique BInGaN, InGaN sans et avec barrière arrière BGaN (back-barrier)..

Abstract

This work deals with the study of the optoelectronic properties of single-quantum well LEDs using the SILVACO software. The structure that we simulate is a quantum well-based blue light-emitting diode sandwiched between two p-and n-doped GaN layers. In the first part of this work, we study the influence of the AlGaN electron blocking layer on LED performance. In the second part, we carry out a study of the blue LED based on the ByInxGa1-x-yN/GaN (QW) heterostructure. In the third structure, we insert a layer of ternary material, BGaN, as a back barrier layer. The electrical and optical characteristics of InGaN SQW blue LED are greatly enhanced with the use of a BGaN back barrier layer.