AlGaN/GaN Heterostructure Field-Effect Transistors (HFETs) Model Including Impact Ionization Rates

Abstract

Hot carrier effects in semiconductors are crucial phenomena or electron devices, since they play an important role in the device. One of the most powerful tools to describe hot carrier effects is ensemble Monte Carlo (EMC) simulation. This article reports the development and application of a Two-dimensional selfconsistent Monte Carlo simulator for electron transport in wurtzite phase AlGaN/GaN heterostructure (HFETs). The properties of AlGaN/GaN HFETs at the higher ambient temperature and doping concentration are described and evaluated. It is shown that the saturation drain current and peak transconductance of the devices investigated decrease similarly with increased temperature with respect to their room temperature values. On the other hand, the higher acceptor and donor concentration are favourable for restraining the shifts of threshold voltage in the AlGaN/GaN HFET.