Temperature effects on the Drain Current in GaN Dual-Gate MESFET using Two-Dimensional Device Simulation
| dc.contributor.author | Djelti, Hamida | en_US |
| dc.contributor.author | Feham, Mohammed | en_US |
| dc.contributor.author | Ouslimani, Achour | en_US |
| dc.contributor.author | Kasbari, Abed-Elhak | en_US |
| dc.date.accessioned | 2013-03-20T08:33:49Z | en_US |
| dc.date.available | 2013-03-20T08:33:49Z | en_US |
| dc.date.issued | 2012-01 | en_US |
| dc.description | IJCSI International Journal of Computer Science Issues, Vol. 9, Issue 1, No 3, January 2012. | en_US |
| dc.description.abstract | Temperature dependence of the GaN-Dual-Gate MESFET (GaNDGMESFET) DC-characteristics is investigated using two dimensional numerical simulations. Differential equations derived from a Hydrodynamic electron transport model describe the physical proprieties of the device. Simulation results over a wide range of temperature from 300 K to 900 K performed on an industrial software Atlas from SILVACO are presented for a GaN-DGMESFET with a gate length of 0.5 µm. The results show a significant degradation of the DC characteristics. Variation of the electron temperature with the drain-source voltage (Vds) is studied and a large temperature is observed for Vds > 1 V. At low drain-source voltage (Vds < 1 V) the electron temperature is closed to the lattice temperature. | en_US |
| dc.identifier.issn | 1694-0814 | en_US |
| dc.identifier.uri | https://dspace.univ-tlemcen.dz/handle/112/1658 | en_US |
| dc.language.iso | en | en_US |
| dc.subject | DGMESFET | en_US |
| dc.subject | GaN | en_US |
| dc.subject | Temperature | en_US |
| dc.subject | Steady-state | en_US |
| dc.title | Temperature effects on the Drain Current in GaN Dual-Gate MESFET using Two-Dimensional Device Simulation | en_US |
| dc.type | Article | en_US |