Temperature effects on the Drain Current in GaN Dual-Gate MESFET using Two-Dimensional Device Simulation

Abstract

Temperature dependence of the GaN-Dual-Gate MESFET (GaNDGMESFET) DC-characteristics is investigated using two dimensional numerical simulations. Differential equations derived from a Hydrodynamic electron transport model describe the physical proprieties of the device. Simulation results over a wide range of temperature from 300 K to 900 K performed on an industrial software Atlas from SILVACO are presented for a GaN-DGMESFET with a gate length of 0.5 µm. The results show a significant degradation of the DC characteristics. Variation of the electron temperature with the drain-source voltage (Vds) is studied and a large temperature is observed for Vds > 1 V. At low drain-source voltage (Vds < 1 V) the electron temperature is closed to the lattice temperature.