A coparative study between BGaN layers grown on GaN/AI2O3 and AIN/AI2O3 by MOVPE

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dc.contributor.authorBouchaour, Men_US
dc.contributor.authorOrsal, Gen_US
dc.contributor.authorOuld-Abbas, Aen_US
dc.contributor.authorMaloufi, Nen_US
dc.contributor.authorGautier, Sen_US
dc.contributor.authorChabane Sari, N.Een_US
dc.contributor.authorOugazzaden, Aen_US
dc.date.accessioned2013-03-03T09:52:46Zen_US
dc.date.available2013-03-03T09:52:46Zen_US
dc.date.issued2012en_US
dc.description.abstractIII-nitride wide band gap semiconductors ( GaN, AIN, and InN) have recently attracted considerable interesten_US
dc.identifier.urihttps://dspace.univ-tlemcen.dz/handle/112/1507en_US
dc.subjectBGaNen_US
dc.subjectSEMen_US
dc.subjectGaN/ AI2O3en_US
dc.subjectAIN/AI2O3en_US
dc.subjectAFMen_US
dc.subjectXRDen_US
dc.subjectMOVPEen_US
dc.titleA coparative study between BGaN layers grown on GaN/AI2O3 and AIN/AI2O3 by MOVPEen_US

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