Investigations of Structural, Electronic, and Half-metallic Ferromagnetic Properties in (Al, Ga, In)(1-x) M (x) N (M = Fe, Mn) Diluted Magnetic Semiconductors
| dc.contributor.author | Doumi, B | en_US |
| dc.contributor.author | Tadjer, A | en_US |
| dc.contributor.author | Dahmane, F | en_US |
| dc.contributor.author | Mesri, D | en_US |
| dc.contributor.author | Aourag, H | en_US |
| dc.date.accessioned | 2014-05-26T09:43:36Z | en_US |
| dc.date.available | 2014-05-26T09:43:36Z | en_US |
| dc.date.issued | 2013-03 | en_US |
| dc.description.abstract | We investigate the structural, electronic, and magnetic properties of (M = Fe, Mn)-based zinc blende diluted magnetic semiconductors (DMS) (Al, Ga, In)(1-x) M (x) N for (x=0.0625,0.125,0.25), using first-principles calculations with the full-potential linearized augmented plane waves (FP-LAPW) method within the density functional theory and local spin-density approximation. The analysis of electronic structures and magnetic properties show that (Al, Ga, In)(1-x) Fe (x) N at (x=0.0625,0.125,0.25) are magnetic insulators, and In1-x Mn (x) N at (x=0.0625,0.125) are metallic in nature. On the other hand the (Al, Ga)(1-x) Mn (x) N at (x=0.0625,0.125,0.25) and In0.75Mn0.25N are half-metallic ferromagnets with magnetic spin polarization of 100 %, where the ferromagnetic ground states result from a double-exchange mechanism, and these compounds are predicted to be good candidates for spintronic applications. | en_US |
| dc.identifier.issn | 1557-1939 | en_US |
| dc.identifier.uri | https://dspace.univ-tlemcen.dz/handle/112/5122 | en_US |
| dc.language.iso | en | en_US |
| dc.title | Investigations of Structural, Electronic, and Half-metallic Ferromagnetic Properties in (Al, Ga, In)(1-x) M (x) N (M = Fe, Mn) Diluted Magnetic Semiconductors | en_US |
| dc.type | Article | en_US |