Adjusted Adashi’s Model of Exciton Bohr Parameter and New Proposed Models for Optical Properties of III-V Semiconductors

Simple item page
dc.contributor.authorKorti Baghdadli, Nawalen_US
dc.contributor.authorMerad, Abdelkrimen_US
dc.contributor.authorBenouaz, Tayeben_US
dc.date.accessioned2013-09-18T10:38:33Zen_US
dc.date.available2013-09-18T10:38:33Zen_US
dc.date.issued2013en_US
dc.description.abstractAdjusted Adashi’s Model of Exciton Bohr Parameter and New Proposed Models for Optical Properties of III-V Semiconductors.en_US
dc.identifier.urihttps://dspace.univ-tlemcen.dz/handle/112/2505en_US
dc.language.isoenen_US
dc.publisherUniversity of Tlemcenen_US
dc.relation.ispartofJournal title / Revue : Adjusted Adashi’s Model of Exciton Bohr Parameter and New Proposed Models for Optical Properties of III-V Semiconductors American Journal of Materials Science and Technology (2013) 3: 65- 73 doi:10.7726/ajmst.2013.1008.
dc.titleAdjusted Adashi’s Model of Exciton Bohr Parameter and New Proposed Models for Optical Properties of III-V Semiconductorsen_US
dc.typeArticleen_US

Files

Original bundle

Now showing 1 - 1 of 1
Thumbnail Image
Name:
Adjusted-Adashi’s-Model-of-Exciton-Bohr-Parameter-and-New-Proposed-Models-for-Optical-Properties-of-III-V-Semiconductors.pdf
Size:
41.79 KB
Format:
Adobe Portable Document Format
Download

License bundle

Now showing 1 - 1 of 1
Thumbnail Image
Name:
license.txt
Size:
1.71 KB
Format:
Item-specific license agreed upon to submission
Description:
Download

Collections

Articles internationaux