Steady State and Transient Study of The Electron Transport In N-Type GaSb Using Three Valley Monte Carlo Model

Abstract

In this work, an investigation of the steady state and transient electron transport, at high electric field and high temperature, in n-type GaSb material was presented. We applied a Monte Carlo model considering the three valleys of the conduction band (Γ, L, X), isotropic and non-parabolic centered on the important symmetry point of the first Brillouin zone. This model provides a detailed description of the electronic dynamic and the electrons behavior at high electrical fields and high temperatures in these materials in each considered valleys. The calculation is made for different values of applied electrical field ranging from 50 to 600KV at different values of temperature. The scatterings rates taken into consideration are coulomb scattering acoustical and optical scattering, intra and inter-valleys scattering.