Développement Des Propriétés Optiques Et Electroniques Des Nitrures III-V, Amélioration Des Performances Des composants Optoélectroniques.

Abstract

In the early years of the twentieth century the complex properties of semiconductors were essentially discovered. One of the major areas of semiconductor use is optoelectronics, which is characterized by the complex interaction of electrons and photons at a Nano scale. New materials II-VI and III-V were used in the elaboration of photodiodes. The decrease in the size of these devices makes their performance significantly increase. In our work we create three main thin film, multi quantum well and nanoparticle PIN structures using gallium nitride indium as the main material of the active zone. The results obtained from our simulation by SILVACO and Mathcad have demonstrated the usefulness of nanoparticles in improving electronic and optical properties such as responsivity, efficiency and transport properties.