ETUDE ET SIMULATION DES PROPRIETES PHOTOVOLTAIQUES DES CELLULES SOLAIRES A BASE DU CHALCOPYRITE CIGS.

Abstract

: In this thesis we have performed a simulation of single junction thin film solar cells based on Cu (In1-x Gax) Se2.we used the SCAPS software to simulate the electrical characteristics of this solar cell.The efficiency of the cell of the 1st case is: 17,71% and the efficiency of the modification cell becomes: 23,40%.We note that the thickness has a very important impact on the improvement of the efficiency of the solar cell.It is necessary to decrease the thickness of the ZnO window layer and CdS buffer layer to increase the thickness of the CIGS absorber to 3.9 μm for good performance.The results of the simulation study can be summarized as follows: Increasing the thickness of the ZnO layer decreases the conversion efficiency ƞ of the solar cell.The increase in the thickness of the CdS n-type layer also decreases the efficiency of the solar cell.Increasing the thickness of the p-type absorber layer in CIGS leads to an increase in the efficiency ƞ and the form factor FF with small values, where the open circuit voltage Vco almost constant.The increase in doping of the ZnO layer due to the increase in yield and the FF form factor