Veuillez utiliser cette adresse pour citer ce document : http://dspace1.univ-tlemcen.dz/handle/112/1493
Titre: Study of Thermal Conductivity of Porous Silicon Using the Micro-Raman Method
Auteur(s): Ould-Abbas, Amaria
Bouchaour, Mama
Chabane Sari, Nasr-Eddine
Mots-clés: Mono-Crystal Silicon
Porous Silicon
Thermal Conductivity
Micro-Raman Spectroscopy
Date de publication: 2012
Résumé: In this work, we are interesting in the measurement of thermal conductivity (on the surface and in-depth) of Porous silicon by the micro-Raman spectroscopy. This direct method (micro-Raman spectroscopy) enabled us to develop a systematic means of nvestigation of the morphology and the thermalconductivity of Porous silicon oxidized or no. The thermal conductivity is studied according to the parameters of anodization and fraction of silicon oxidized. Thermaltransport in the porous silicon layers is limited by its porous nature and the blocking of transport in the silicon skeleton what supports its use in the thermal sensors
URI/URL: http://dspace.univ-tlemcen.dz/handle/112/1493
Collection(s) :Articles nationaux

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