Bouchaour, MOrsal, GOuld-Abbas, AMaloufi, NGautier, SChabane Sari, N.EOugazzaden, A2013-03-032013-03-032012https://dspace.univ-tlemcen.dz/handle/112/1507III-nitride wide band gap semiconductors ( GaN, AIN, and InN) have recently attracted considerable interestBGaNSEMGaN/ AI2O3AIN/AI2O3AFMXRDMOVPEA coparative study between BGaN layers grown on GaN/AI2O3 and AIN/AI2O3 by MOVPE