Djelti, HamidaFeham, MohammedOuslimani, AchourKasbari, Abed-Elhak2013-03-202013-03-202012-011694-0814https://dspace.univ-tlemcen.dz/handle/112/1658IJCSI International Journal of Computer Science Issues, Vol. 9, Issue 1, No 3, January 2012.Temperature dependence of the GaN-Dual-Gate MESFET (GaNDGMESFET) DC-characteristics is investigated using two dimensional numerical simulations. Differential equations derived from a Hydrodynamic electron transport model describe the physical proprieties of the device. Simulation results over a wide range of temperature from 300 K to 900 K performed on an industrial software Atlas from SILVACO are presented for a GaN-DGMESFET with a gate length of 0.5 µm. The results show a significant degradation of the DC characteristics. Variation of the electron temperature with the drain-source voltage (Vds) is studied and a large temperature is observed for Vds > 1 V. At low drain-source voltage (Vds < 1 V) the electron temperature is closed to the lattice temperature.enDGMESFETGaNTemperatureSteady-stateArticle