Ghembaza, H.Zerga, A.Saim, R.2013-04-102013-04-102012https://dspace.univ-tlemcen.dz/handle/112/1727The distribution of phosphorus dopants in the emitter formed by POCl3 diffusion show an important ‘kink’ resulting from the existence of electrically inactive phosphorus.Further, this ‘kink’ participates to form a zone called ‘dead layer’ and reduces considerably the minority carrier collection in surface. In order to minimize the effects of this layer, a new technique was used. It can be summarized in an addition of a pre-oxidation step before the phosphorus diffusion. In this paper, we conducted a numerical simulation of phosphorus diffusion by adding a pre-oxidation step, and by varying the chemical quality of silicon oxide SiO2 (wet or dry). The thickness measurement of SiO2 layer formed was accomplished by varying several parameters as: pressure,temperature, and diffusion time. Our results show that it is possible to reduce the kink by a dry SiO2 layer and thickness of 80 nm.enSilicon solar cellsphosphorus diffusionthermal oxidationnumerical simulationdiffusion profileArticle